发明授权
US08379443B2 Charge retention for flash memory by manipulating the program data methodology
有权
通过操纵程序数据方法对闪存进行充电保留
- 专利标题： Charge retention for flash memory by manipulating the program data methodology
- 专利标题（中）： 通过操纵程序数据方法对闪存进行充电保留
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申请号： US12473037申请日： 2009-05-27
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公开(公告)号： US08379443B2公开(公告)日： 2013-02-19
- 发明人: Sheau-Yang Ch'ng , Mee-Choo Ong , Kian-Huat Hoo
- 申请人： Sheau-Yang Ch'ng , Mee-Choo Ong , Kian-Huat Hoo
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Frommer Lawrence & Haug LLP
- 代理商 Matthew M. Gaffney
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04
摘要：
A method, system and apparatus for determining whether any un-programmed cell is affected by charge disturb by comparing the voltage threshold of the un-programmed cells against a reference voltage. If the voltage threshold for the un-programmed cell exceeds the reference voltage, the failed or defective un-programmed cell will be then be programmed. This will change the defective un-programmed cell to a new programmed value. To account for the location of the failing memory cell, address syndrome bits are used to identify the location of the defective memory cell.
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