发明授权
US08379455B2 Nonvolatile semiconductor storage device including failure detection circuit and method of detecting failure on nonvolatile semiconductor storage device
有权
包括故障检测电路和非易失性半导体存储装置中的故障检测方法的非易失性半导体存储装置
- 专利标题： Nonvolatile semiconductor storage device including failure detection circuit and method of detecting failure on nonvolatile semiconductor storage device
- 专利标题（中）： 包括故障检测电路和非易失性半导体存储装置中的故障检测方法的非易失性半导体存储装置
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申请号： US13019316申请日： 2011-02-02
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公开(公告)号： US08379455B2公开(公告)日： 2013-02-19
- 发明人: Yoshikazu Kuroda
- 申请人： Yoshikazu Kuroda
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronic Corporation
- 当前专利权人： Renesas Electronic Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2010-025973 20100208
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A nonvolatile semiconductor storage device includes: a word line; a reading circuit; and a failure detection circuit. The word line is connected to gates of a plurality of nonvolatile memory cell transistors. The reading circuit is connected to one end of the word line and supplies one of a reading selection voltage and a reading non-selection voltage to the word line. The failure detection circuit is connected to the other end of the word line and detects a voltage of the word line supplied with the one of the reading selection voltage and the reading non-selection voltage by comparing the voltage with a plurality of reference voltages.
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