Invention Grant
- Patent Title: Methods of processing a thermal interface material
- Patent Title (中): 处理热界面材料的方法
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Application No.: US12145364Application Date: 2008-06-24
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Publication No.: US08383459B2Publication Date: 2013-02-26
- Inventor: Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
- Applicant: Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).
Public/Granted literature
- US20090317641A1 METHODS OF PROCESSING A THERMAL INTERFACE MATERIAL Public/Granted day:2009-12-24
Information query
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