Invention Grant
US08384128B2 Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
有权
表面沟道晶体管中的载流子迁移率，由其制成的装置以及包含该载流子迁移率的系统
- Patent Title: Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
- Patent Title (中): 表面沟道晶体管中的载流子迁移率，由其制成的装置以及包含该载流子迁移率的系统
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Application No.: US12454354Application Date: 2009-05-15
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Publication No.: US08384128B2Publication Date: 2013-02-26
- Inventor: Ravi Pillarisetty , Mantu Uudait , Marko Radosavljevic , Gilbert Dewey , Jack T. Kavalieros
- Applicant: Ravi Pillarisetty , Mantu Uudait , Marko Radosavljevic , Gilbert Dewey , Jack T. Kavalieros
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A surface channel transistor is provided in a semiconductive device. The surface channel transistor is either a PMOS or an NMOS device. Epitaxial layers are disposed above the surface channel transistor to cause an increased bandgap phenomenon nearer the surface of the device. A process of forming the surface channel transistor includes grading the epitaxial layers.
Public/Granted literature
- US20100289062A1 Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same Public/Granted day:2010-11-18
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