发明授权
- 专利标题： Semiconductor device and a reverse conducting IGBT
- 专利标题（中）： 半导体器件和反向导通IGBT
-
申请号： US13007902申请日： 2011-01-17
-
公开(公告)号： US08384151B2公开(公告)日： 2013-02-26
- 发明人: Frank Pfirsch
- 申请人： Frank Pfirsch
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device is provided. The semiconductor device includes a semiconductor body with a base region and a first electrode arranged on a main horizontal surface of the semiconductor body. The semiconductor body further includes an IGBT-cell with a body region forming a first pn-junction with the base region, and a diode-cell with an anode region forming a second pn-junction with the base region. A source region in ohmic contact with the first electrode and an anti-latch-up region in ohmic contact with the first electrode are, in a vertical cross-section, only formed in the IGBT-cell. The anti-latch-up region has higher maximum doping concentration than the body region. Further a reverse conducting IGBT is provided.
公开/授权文献
- US20120181575A1 Semiconductor Device and a Reverse Conducting IGBT 公开/授权日：2012-07-19