发明授权
US08384193B2 Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain
有权
具有两个不同发射极部分的双极晶体管具有不同浓度的相同类型掺杂剂以改善增益
- 专利标题： Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain
- 专利标题（中）： 具有两个不同发射极部分的双极晶体管具有不同浓度的相同类型掺杂剂以改善增益
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申请号： US13014029申请日： 2011-01-26
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公开(公告)号： US08384193B2公开(公告)日： 2013-02-26
- 发明人: Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
- 申请人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L29/70
- IPC分类号： H01L29/70
摘要：
Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has a first emitter (FE) portion (42-1) of a first dopant concentration CFE, and a second emitter (SE) portion (42-2) of a second dopant concentration CSE. Preferably CSE≧CFE. The SE portion (42-2) desirably comprises multiple sub-regions (45i, 45j, 45k) mixed with multiple sub-regions (47m, 47n, 47p) of the FE portion (42-1). A semiconductor-metal alloy or compound (e.g., a silicide) is desirably used for Ohmic contact (452) to the SE portion (42-2) but substantially not to the FE portion (42-1). Including the FE portion (42-1) electrically coupled to the SE portion (42-2) but not substantially contacting the emitter contact (452) on the SE portion (42-2) provides gain increases of as much as ˜278.
公开/授权文献
- US20120187538A1 BIPOLAR TRANSISTOR WITH IMPROVED GAIN 公开/授权日：2012-07-26
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