Invention Grant
- Patent Title: Semiconductor device and structure
- Patent Title (中): 半导体器件及结构
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Application No.: US12423214Application Date: 2009-04-14
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Publication No.: US08384426B2Publication Date: 2013-02-26
- Inventor: Zvi Or-Bach
- Applicant: Zvi Or-Bach
- Applicant Address: US CA San Jose
- Assignee: MonolithIC 3D Inc.
- Current Assignee: MonolithIC 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Venable LLP
- Agent Steven J. Schwarz; Michael A. Sartori
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H01L23/02

Abstract:
A novel Integrated Circuit device including a plurality of antifuse-configurable interconnect circuits, each circuit including: at least two interconnects, and at least one antifuse, wherein the antifuse is adapted to directly connect at least two interconnects. The Integrated Circuit device also includes a plurality of transistors adapted to configure at least one antifuse of the antifuse-configurable interconnect circuits, wherein the transistors are above the antifuse-configurable interconnect circuits.
Public/Granted literature
- US20110037497A1 Method for Fabrication of a Semiconductor Device and Structure Public/Granted day:2011-02-17
Information query
IPC分类: