发明授权
- 专利标题： Semiconductor devices and methods of fabricating the same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12591701申请日： 2009-11-30
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公开(公告)号： US08384439B2公开(公告)日： 2013-02-26
- 发明人: Jae-chul Park , I-hun Song , Young-soo Park , Kee-won Kwon , Chang-jung Kim , Kyoung-kook Kim , Sung-ho Park , Sung-hoon Lee , Sang-wook Kim , Sun-il Kim
- 申请人： Jae-chul Park , I-hun Song , Young-soo Park , Kee-won Kwon , Chang-jung Kim , Kyoung-kook Kim , Sung-ho Park , Sung-hoon Lee , Sang-wook Kim , Sun-il Kim
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0119942 20081128; KR10-2009-0038461 20090430
- 主分类号： H01L25/00
- IPC分类号： H01L25/00 ; H03K19/00
摘要：
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.