发明授权
- 专利标题： Memory resistor having plural different active materials
- 专利标题（中）： 具有多种不同活性物质的记忆电阻
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申请号： US12847874申请日： 2010-07-30
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公开(公告)号： US08385101B2公开(公告)日： 2013-02-26
- 发明人: Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
- 申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 代理商 Scott K. Gallert
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
公开/授权文献
- US20120026776A1 MEMORY RESISTOR HAVING PLURAL DIFFERENT ACTIVE MATERIALS 公开/授权日：2012-02-02
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