A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and may refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. The method may comprise alternating between applying one or more first voltages having a first polarity to the memory cell and applying one or more second voltages having a second polarity that is opposite the first polarity to the memory cell until the reversible resistivity-switching memory element is formed. There may be a rest period between applying the voltages of opposite polarity.