发明授权
- 专利标题： Nonvolatile memory circuit using spin MOS transistors
- 专利标题（中）： 使用自旋MOS晶体管的非易失性存储电路
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申请号： US13360904申请日： 2012-01-30
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公开(公告)号： US08385114B2公开(公告)日： 2013-02-26
- 发明人: Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
- 申请人： Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-025821 20100208
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series, gates of the first p-channel MOS transistor and the first n-channel spin MOS transistor are connected, gates of the second p-channel MOS transistor and the second n-channel spin MOS transistor are connected, a first n-channel transistor includes a drain connected to a drain of the first p-channel transistor and the gate of the second p-channel transistor, a second n-channel transistor includes a drain connected to a drain of the second p-channel transistor and the gate of the first p-channel transistor, and gates of the first and second n-channel transistors are connected.
公开/授权文献
- US20120119274A1 NONVOLATILE MEMORY CIRCUIT USING SPIN MOS TRANSISTORS 公开/授权日：2012-05-17
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