Invention Grant
- Patent Title: Memory circuit and method of operating the same
- Patent Title (中): 存储电路及其操作方法
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Application No.: US12913087Application Date: 2010-10-27
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Publication No.: US08385136B2Publication Date: 2013-02-26
- Inventor: Cheng Hung Lee , Jung-Ping Yang
- Applicant: Cheng Hung Lee , Jung-Ping Yang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
The present application discloses a memory circuit having a first data line configured to carry a first data line signal and a second data line configured to carry a second data line signal. Further, a first driver is coupled to the first data line and the second data line and configured to establish a first current path for the first data line responsive to the second data line signal. Similarly, a second driver is coupled to the first data line and the second data line and configured to establish a second current path for the second data line responsive to the first data line signal. The memory circuit further has a first driver enabling line configured to selectively enable the first driver and a second driver enabling line configured to selectively enable the second driver.
Public/Granted literature
- US20120106269A1 MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME Public/Granted day:2012-05-03
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