Invention Grant
- Patent Title: Termination circuit of semiconductor device
- Patent Title (中): 半导体器件端接电路
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Application No.: US13162377Application Date: 2011-06-16
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Publication No.: US08385137B2Publication Date: 2013-02-26
- Inventor: Yun Song
- Applicant: Yun Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0110038 20081106
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A semiconductor device includes a termination driver for driving a data line with a predetermined termination level by using an external power supply voltage and a drive current controller for controlling a drive current flowing into the data line from the termination driver in response to a voltage level of the external power supply voltage.
Public/Granted literature
- US20110249511A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-10-13
Information query
