发明授权
- 专利标题： Off-chip non-volatile memory access
- 专利标题（中）： 片外非易失性存储器访问
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申请号： US12612615申请日： 2009-11-04
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公开(公告)号： US08386738B1公开(公告)日： 2013-02-26
- 发明人: Xiaodong Sun
- 申请人： Xiaodong Sun
- 申请人地址： BM Hamilton
- 专利权人： Marvell International Ltd.
- 当前专利权人： Marvell International Ltd.
- 当前专利权人地址： BM Hamilton
- 主分类号： G06F12/00
- IPC分类号： G06F12/00
摘要：
The present disclosure includes systems and techniques relating to non-volatile memory. Systems and techniques can include sending a sequence of data including an address to a non-volatile memory to request data and receiving data from the non-volatile memory. The data can include a first portion and a second, different portion. The systems and techniques can include determining, based at least on the first portion, whether the second portion includes valid access parameter information associated with the non-volatile memory.
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