Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12616529Application Date: 2009-11-11
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Publication No.: US08386858B2Publication Date: 2013-02-26
- Inventor: Jeong-Hun Lee , Jeong-Tae Hwang
- Applicant: Jeong-Hun Lee , Jeong-Tae Hwang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0060636 20090703
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/00

Abstract:
A semiconductor memory device is capable of performing a test operation in its various operation modes. Particularly, the semiconductor memory device can enter a test mode in other modes, as well as, an all bank pre-charge mode. The semiconductor memory device includes a test mode control block configured to generate a test signal enabled for a predetermined interval in an active mode, and a mode register set control block configured to enable a mode register set signal for a test operation in the predetermined interval in response to the test signal.
Public/Granted literature
- US20110004794A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-01-06
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