Invention Grant
- Patent Title: Method of fabricating electron-emitting device and method of manufacturing image display apparatus
- Patent Title (中): 制造电子发射器件的方法和制造图像显示装置的方法
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Application No.: US12627982Application Date: 2009-11-30
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Publication No.: US08388400B2Publication Date: 2013-03-05
- Inventor: Naofumi Aoki , Shoji Nishida
- Applicant: Naofumi Aoki , Shoji Nishida
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2008-307586 20081202; JP2009-217330 20090918
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J1/30
Abstract:
The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.
Public/Granted literature
- US20100136869A1 METHOD OF FABRICATING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS Public/Granted day:2010-06-03
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