Invention Grant
- Patent Title: Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
- Patent Title (中): 基于部分施加的活化层形成的半导体器件的接触元件
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Application No.: US12910979Application Date: 2010-10-25
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Publication No.: US08389401B2Publication Date: 2013-03-05
- Inventor: Robert Seidel , Markus Nopper , Axel Preusse
- Applicant: Robert Seidel , Markus Nopper , Axel Preusse
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009055433 20091231
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768
Abstract:
When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.
Public/Granted literature
- US20110156270A1 CONTACT ELEMENTS OF SEMICONDUCTOR DEVICES FORMED ON THE BASIS OF A PARTIALLY APPLIED ACTIVATION LAYER Public/Granted day:2011-06-30
Information query
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