发明授权
- 专利标题： Electrode structure adapted for high applied voltage and fabrication method thereof
- 专利标题（中）： 适用于高施加电压的电极结构及其制造方法
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申请号： US12511711申请日： 2009-07-29
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公开(公告)号： US08389872B2公开(公告)日： 2013-03-05
- 发明人: Chen Hsu , Chih-Ming Hu , Chun-Yen Lin , Wen-Sheng Lin , Shih-Chieh Jang
- 申请人： Chen Hsu , Chih-Ming Hu , Chun-Yen Lin , Wen-Sheng Lin , Shih-Chieh Jang
- 申请人地址： TW Taipei
- 专利权人： Hermes-Epitek Corp.
- 当前专利权人： Hermes-Epitek Corp.
- 当前专利权人地址： TW Taipei
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号： H05K1/11
- IPC分类号： H05K1/11
摘要：
An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the breakdown voltage applied to the electrode structure may be increased.
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