发明授权
- 专利标题： Quadrangle MOS transistors
- 专利标题（中）： 四边形MOS晶体管
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申请号： US12813379申请日： 2010-06-10
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公开(公告)号： US08390078B2公开(公告)日： 2013-03-05
- 发明人: Shuo-Mao Chen , Chin-Chou Liu
- 申请人： Shuo-Mao Chen , Chin-Chou Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L27/085
- IPC分类号： H01L27/085
摘要：
A quadrangle transistor unit includes four transistor units. Each of the four transistor units includes a gate electrode. The gate electrodes of the four transistor units are aligned to four sides of a square. At least two of the four transistor units are connected in parallel.
公开/授权文献
- US20110303984A1 Quadrangle MOS Transistors 公开/授权日：2011-12-15
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