Invention Grant
- Patent Title: Low-power, high-voltage integrated circuits
- Patent Title (中): 低功耗,高压集成电路
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Application No.: US12853631Application Date: 2010-08-10
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Publication No.: US08390362B2Publication Date: 2013-03-05
- Inventor: Mario Motz
- Applicant: Mario Motz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Patterson Thuente Christensen Pedersen, P.A.
- Main IPC: G05F3/02
- IPC: G05F3/02

Abstract:
Embodiments relate to an ultra-low-power, high-voltage integrated circuit (IC) that also has high electromagnetic compatibility (EMC). Embodiments address the desire for an ultra-low-power, high-voltage IC that also has high EMC and comprise a high-voltage EMC protection circuit with normal current consumption coupled to an ultra-low-power, low-voltage oscillator that controls a sleep/wake, or duty, cycle of a high-voltage circuit.
Public/Granted literature
- US20120038416A1 Low-Power, High-Voltage Integrated Circuits Public/Granted day:2012-02-16
Information query
IPC分类: