The present invention provides a smoke-free ESD protection structure used in integrated circuit devices. A JFET or n-channel MOS transistor is coupled between an I/O pad, and a transistor and diode, wherein the JFET or n-channel MOS transistor limits the current flowing through the diode and transistor to prevent the integrated circuit device from heating up and catching on fire or smoke during the smoke test. Moreover, the integrated circuit device will not be damaged by the smoke test.