发明授权
- 专利标题: Nonvolatile memory
- 专利标题(中): 非易失性存储器
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申请号: US12623553申请日: 2009-11-23
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公开(公告)号: US08391067B2公开(公告)日: 2013-03-05
- 发明人: Kazunori Kasuga
- 申请人: Kazunori Kasuga
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Staas & Halsey LLP
- 优先权: JP2008-311999 20081208
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A nonvolatile memory includes a memory cell array including a plurality of memory cells, each of the memory cells capable of storing electric charges nonvolatilly, a first sense amplifier for comparing a voltage produced by one of the selected memory cells to be read out with a first threshold value for distinguishing between a write state and an erase state of the selected memory cell, a second sense amplifier for comparing the voltage produced by one of the selected memory cell with a second threshold value having a greater voltage than the first threshold voltage, and a write unit for rewriting data of the selected memory cell when the first and the second sense amplifiers produce different sense outputs from each other.
公开/授权文献
- US20100142276A1 NONVOLATILE MEMORY 公开/授权日:2010-06-10