发明授权
US08394656B2 Method of creating MEMS device cavities by a non-etching process
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通过非蚀刻工艺制造MEMS器件腔的方法
- 专利标题: Method of creating MEMS device cavities by a non-etching process
- 专利标题(中): 通过非蚀刻工艺制造MEMS器件腔的方法
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申请号: US12831898申请日: 2010-07-07
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公开(公告)号: US08394656B2公开(公告)日: 2013-03-12
- 发明人: Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
- 申请人: Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
- 申请人地址: US CA San Diego
- 专利权人: Qualcomm MEMS Technologies, Inc.
- 当前专利权人: Qualcomm MEMS Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
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