发明授权
- 专利标题： Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer
- 专利标题（中）： 通过沉积钯层来改善焊垫金属化与相邻钝化层之间粘附的方法
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申请号： US12705021申请日： 2010-02-12
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公开(公告)号： US08394713B2公开(公告)日： 2013-03-12
- 发明人: Varughese Mathew
- 申请人： Varughese Mathew
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Robert L. King; Jonathan N. Geld
- 主分类号： H01L21/445
- IPC分类号： H01L21/445
摘要：
A semiconductor device structure has a semiconductor die that has a bond pad with a passivation layer surrounding a portion of the bond pad. A nickel layer, which is deposited, is on the inner portion. A space is between a sidewall of the nickel layer and the passivation layer and extends to the bond pad. A palladium layer is over the nickel layer and fills the space. The space is initially quite small but is widened by an isotropic etch so that when the palladium layer is deposited, the space is sufficiently large so that the deposition of palladium is able to fill the space. Filling the space results in a structure in which the palladium contacts the nickel layer, the passivation layer and the bond pad.
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