Invention Grant
- Patent Title: Substrate-penetrating electrical connections
- Patent Title (中): 基板穿透电气连接
-
Application No.: US12439568Application Date: 2007-09-04
-
Publication No.: US08395057B2Publication Date: 2013-03-12
- Inventor: Pelle Rangsten , Hakan Johansson , Johan Bejhed
- Applicant: Pelle Rangsten , Hakan Johansson , Johan Bejhed
- Applicant Address: SE Uppsala
- Assignee: NanoSpace AB
- Current Assignee: NanoSpace AB
- Current Assignee Address: SE Uppsala
- Agency: Young & Thompson
- Priority: SE0601832 20060904
- International Application: PCT/SE2007/050617 WO 20070904
- International Announcement: WO2008/030176 WO 20080313
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K1/09 ; H01L23/48 ; H01L21/44

Abstract:
A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
Public/Granted literature
- US20100018764A1 SUBSTRATE-PENETRATING ELECTRICAL CONNECTIONS Public/Granted day:2010-01-28
Information query