发明授权
- 专利标题: Substrate-penetrating electrical connections
- 专利标题(中): 基板穿透电气连接
-
申请号: US12439568申请日: 2007-09-04
-
公开(公告)号: US08395057B2公开(公告)日: 2013-03-12
- 发明人: Pelle Rangsten , Hakan Johansson , Johan Bejhed
- 申请人: Pelle Rangsten , Hakan Johansson , Johan Bejhed
- 申请人地址: SE Uppsala
- 专利权人: NanoSpace AB
- 当前专利权人: NanoSpace AB
- 当前专利权人地址: SE Uppsala
- 代理机构: Young & Thompson
- 优先权: SE0601832 20060904
- 国际申请: PCT/SE2007/050617 WO 20070904
- 国际公布: WO2008/030176 WO 20080313
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H05K1/09 ; H01L23/48 ; H01L21/44
摘要:
A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
公开/授权文献
- US20100018764A1 SUBSTRATE-PENETRATING ELECTRICAL CONNECTIONS 公开/授权日:2010-01-28
信息查询