发明授权
US08395138B2 Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
有权
具有含有氮并含有碳作为主要成分的缓冲层的非挥发性半导体存储器
- 专利标题： Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
- 专利标题（中）： 具有含有氮并含有碳作为主要成分的缓冲层的非挥发性半导体存储器
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申请号： US12545326申请日： 2009-08-21
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公开(公告)号： US08395138B2公开(公告)日： 2013-03-12
- 发明人: Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
- 申请人： Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-008192 20090116
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L29/00 ; H01L29/02 ; H01L29/04 ; H01L29/06 ; H01L31/0312 ; G11C11/00
摘要：
A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films.
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