Invention Grant
- Patent Title: Thin film transistors having an additional floating channel and methods of manufacturing the same
- Patent Title (中): 具有附加浮动通道的薄膜晶体管及其制造方法
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Application No.: US12929453Application Date: 2011-01-26
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Publication No.: US08395155B2Publication Date: 2013-03-12
- Inventor: Eok-su Kim , Sang-yoon Lee , Myung-kwan Ryu , Kyung-bae Park
- Applicant: Eok-su Kim , Sang-yoon Lee , Myung-kwan Ryu , Kyung-bae Park
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0007078 20100126; KR10-2011-0004535 20110117
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.
Public/Granted literature
- US20110180803A1 Thin film transistors and methods of manufacturing the same Public/Granted day:2011-07-28
Information query
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