Invention Grant
- Patent Title: Charge pump circuit and semiconductor integrated circuit
- Patent Title (中): 电荷泵电路和半导体集成电路
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Application No.: US12865585Application Date: 2009-08-25
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Publication No.: US08395437B2Publication Date: 2013-03-12
- Inventor: Takeshi Hamada
- Applicant: Takeshi Hamada
- Applicant Address: JP Tokyo
- Assignee: Asahi Kasei Microdevices Corporation
- Current Assignee: Asahi Kasei Microdevices Corporation
- Current Assignee Address: JP Tokyo
- Agency: Morgan, Lewis & Bockius LLP
- Priority: JP2008-237473 20080917
- International Application: PCT/JP2009/064767 WO 20090825
- International Announcement: WO2010/032589 WO 20100325
- Main IPC: G05F3/02
- IPC: G05F3/02 ; G05F1/10

Abstract:
Provided is a charge pump circuit which is preferably used for reducing noise generated when electric charges are accumulated in a capacitor of the charge pump circuit. A load driving system 1 includes a charge pump circuit 2, a clock generation circuit 4, an amplifier circuit 6, and a load 8. The charge pump circuit 2 includes capacitors C1 and C2, a transistor PTr3 which is a P-channel MOS transistor and controls current supply to the C1, switching elements SW1 to SW3, and a supply current control circuit 20. The charge pump circuit 2 switches the SW1 to SW3, to thereby perform the accumulation of electric charges to the C1 and the transfer of the accumulated electric charges to the C2 for generating a negative power source. The supply current control circuit 20 includes a transistor PTr4, a switching element SW4, and a transistor NTr6 which forms a current mirror with a transistor NTr5 which constitutes an output stage of the amplifier circuit 6. The C1 is charged with a supply current which is positively correlated with a load current via the NTr6, the SW4, the PTr3, and the PTr4.
Public/Granted literature
- US20110001554A1 CHARGE PUMP CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-01-06
Information query
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