Invention Grant
US08395437B2 Charge pump circuit and semiconductor integrated circuit 有权
电荷泵电路和半导体集成电路

Charge pump circuit and semiconductor integrated circuit
Abstract:
Provided is a charge pump circuit which is preferably used for reducing noise generated when electric charges are accumulated in a capacitor of the charge pump circuit. A load driving system 1 includes a charge pump circuit 2, a clock generation circuit 4, an amplifier circuit 6, and a load 8. The charge pump circuit 2 includes capacitors C1 and C2, a transistor PTr3 which is a P-channel MOS transistor and controls current supply to the C1, switching elements SW1 to SW3, and a supply current control circuit 20. The charge pump circuit 2 switches the SW1 to SW3, to thereby perform the accumulation of electric charges to the C1 and the transfer of the accumulated electric charges to the C2 for generating a negative power source. The supply current control circuit 20 includes a transistor PTr4, a switching element SW4, and a transistor NTr6 which forms a current mirror with a transistor NTr5 which constitutes an output stage of the amplifier circuit 6. The C1 is charged with a supply current which is positively correlated with a load current via the NTr6, the SW4, the PTr3, and the PTr4.
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