Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US12700986Application Date: 2010-02-05
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Publication No.: US08397132B2Publication Date: 2013-03-12
- Inventor: Hiroyuki Fukuyama , Satoshi Miyazaki
- Applicant: Hiroyuki Fukuyama , Satoshi Miyazaki
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Taft Stettinius & Hollister LLP
- Priority: JP2009-039455 20090223
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An exemplary memory device has at least one memory chip that stores data and error correcting information. An error detecting circuit in the memory chip performs a calculation on the data and error correcting information to obtain error detection information indicating the locations of bit errors in the data. The uncorrected data and the error detection information are output from the memory chip. The uncorrected data and error detection information may also be output from the memory device, or the memory device may include a memory controller chip with an error correcting circuit that uses the error detection information to correct the bit errors and outputs corrected data from the memory device.
Public/Granted literature
- US20100218072A1 MEMORY DEVICE Public/Granted day:2010-08-26
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