Semiconductor device for improving electrical and mechanical connectivity of conductive pillers and method therefor

Invention Grant

US08399348B2 Semiconductor device for improving electrical and mechanical connectivity of conductive pillers and method therefor 有权

Title translation: 用于改善导电块的电气和机械连接性的半导体器件及其方法

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Patent Title: Semiconductor device for improving electrical and mechanical connectivity of conductive pillers and method therefor
Patent Title (中): 用于改善导电块的电气和机械连接性的半导体器件及其方法
Application No.: US13621076

Application Date: 2012-09-15
Publication No.: US08399348B2

Publication Date: 2013-03-19
Inventor: Kwang Sun Oh , Dong Hee Lee , Dong In Kim , Bae Yong Kim , Jin Woo Park
Applicant: Kwang Sun Oh , Dong Hee Lee , Dong In Kim , Bae Yong Kim , Jin Woo Park
Applicant Address: US AZ Chandler
Assignee: Amkor Technology, Inc
Current Assignee: Amkor Technology, Inc
Current Assignee Address: US AZ Chandler
Agency: McAndrews, Held & Malloy, Ltd.
Main IPC: H01L21/44
IPC: H01L21/44

Semiconductor device for improving electrical and mechanical connectivity of conductive pillers and method therefor

Abstract:

A semiconductor device has a semiconductor die having a first surface and a second surface wherein at least one bond pad is formed on the first surface. A passivation layer is formed on the first surface of the semiconductor device, wherein a central area of the at least one bond is exposed. A seed layer is formed on exposed portions of the bond pad and the passivation layer. A conductive pillar is formed on the seed layer. The conductive pillar has a base portion wherein the base portion has a diameter smaller than the seed layer and a stress relief portion extending from a lateral surface of a lower section of the base portion toward distal ends of the seed layer. A solder layer is formed on the conductive pillar.

Abstract(Chinese):

半导体器件具有具有第一表面和第二表面的半导体管芯，其中至少一个接合焊盘形成在第一表面上。在半导体器件的第一表面上形成钝化层，其中暴露至少一个键的中心区域。种子层形成在接合焊盘和钝化层的暴露部分上。在种子层上形成导电柱。导电柱具有基部，其基部具有比籽晶层更小的直径，以及应力消除部，其从基部的下部的侧面向种子层的远端延伸。在导电柱上形成焊料层。

Public/Granted literature

US20130012015A1 SEMICONDUCTOR DEVICE FOR IMPROVING ELECTRICAL AND MECHANICAL CONNECTIVITY OF CONDUCTIVE PILLERS AND METHOD THEREFOR Public/Granted day:2013-01-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的