- 专利标题： Through-silicon via with low-K dielectric liner
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申请号： US12617259申请日： 2009-11-12
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公开(公告)号： US08399354B2公开(公告)日： 2013-03-19
- 发明人: Ming-Fa Chen
- 申请人： Ming-Fa Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.
公开/授权文献
- US20100176494A1 Through-Silicon Via With Low-K Dielectric Liner 公开/授权日：2010-07-15
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