Invention Grant
- Patent Title: Oxide semiconductor transistors and methods of manufacturing the same
- Patent Title (中): 氧化物半导体晶体管及其制造方法
-
Application No.: US12801500Application Date: 2010-06-11
-
Publication No.: US08399882B2Publication Date: 2013-03-19
- Inventor: Sang-hun Jeon , I-hun Song , Chang-jung Kim , Sung-ho Park
- Applicant: Sang-hun Jeon , I-hun Song , Chang-jung Kim , Sung-ho Park
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0001896 20100108
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.
Public/Granted literature
- US20110168993A1 Transistors and methods of manufacturing the same Public/Granted day:2011-07-14
Information query
IPC分类:
