A FinFET and nanowire transistor with strain direction optimized in accordance with the sideface orientation and carrier polarity and an SMT-introduced manufacturing method for achieving the same are provided. A semiconductor device includes a pMISFET having a semiconductor substrate, a rectangular solid-shaped semiconductor layer formed at upper part of the substrate to have a top surface parallel to a principal plane of the substrate and a sideface with a (100) plane perpendicular to the substrate's principal plane, a channel region formed in the rectangular semiconductor layer, a gate insulating film formed at least on the sideface of the rectangular layer, a gate electrode on the gate insulator film, and source/drain regions formed in the rectangular semiconductor layer to interpose the channel region therebetween. The channel region is applied a compressive strain in the perpendicular direction to the substrate principal plane. A manufacturing method of the device is also disclosed.