发明授权
US08400135B2 Self-oscillating switch circuit and a driver circuit comprising such a switch circuit 有权
自振荡开关电路和包括这种开关电路的驱动电路

  • 专利标题: Self-oscillating switch circuit and a driver circuit comprising such a switch circuit
  • 专利标题(中): 自振荡开关电路和包括这种开关电路的驱动电路
  • 申请号: US12596858
    申请日: 2008-04-22
  • 公开(公告)号: US08400135B2
    公开(公告)日: 2013-03-19
  • 发明人: Jeroen Snelten
  • 申请人: Jeroen Snelten
  • 申请人地址: NL Eindhoven
  • 专利权人: Koninklijke Philips Electronics N.V.
  • 当前专利权人: Koninklijke Philips Electronics N.V.
  • 当前专利权人地址: NL Eindhoven
  • 代理商 Mark L. Beloborodov
  • 优先权: EP07107154 20070427
  • 国际申请: PCT/IB2008/051543 WO 20080422
  • 国际公布: WO2008/132658 WO 20081106
  • 主分类号: G05F3/00
  • IPC分类号: G05F3/00
Self-oscillating switch circuit and a driver circuit comprising such a switch circuit
摘要:
A self-oscillating switch circuit is configured for use in a switching DC-DC converter (switched mode power supply (SMPS)). The self-oscillating switch circuit comprises an input terminal (Tin1, Tin2) for receiving power from a power supply (51) and an output terminal (Tont1, Tont2) for supplying power to a load. The load may be a high-power LED, for example. The self-oscillating switch circuit further comprises a power switch semi-> conductor device (Q1) having a control terminal and a control semi-conductor device (Q2) coupled to the power switch semi-conductor device. The power switch semi-conductor device is configured for controlling a load current between the input terminal and the output terminal and the control semi-conductor device is configured for supplying a control signal to the control terminal of the power switch semi-conductor device for controlling switching of the power switch semi-conductor device. In order to reduce a power loss in the power switch semi-conductor device, a gain semi-conductor device (Q4) is coupled between the power switch semi-conductor device and the control semi-conductor device for amplifying the control signal. Due to the amplification of the control signal, switching of the power switch semi-conductor device is performed faster, thereby reducing power dissipation due to a load current flowing through the power switch semi-conductor device, while the base-emitter voltage of the power switch transistor is below a base emitter voltage corresponding to the peak current at that time.
信息查询
0/0