Invention Grant
US08400819B2 Integrated circuit having variable memory array power supply voltage
有权
具有可变存储阵列电源电压的集成电路
- Patent Title: Integrated circuit having variable memory array power supply voltage
- Patent Title (中): 具有可变存储阵列电源电压的集成电路
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Application No.: US12714079Application Date: 2010-02-26
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Publication No.: US08400819B2Publication Date: 2013-03-19
- Inventor: Andrew C. Russell
- Applicant: Andrew C. Russell
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Daniel D. Hill
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An integrated circuit comprises a memory array and a bias circuit. The memory array comprises a plurality of memory cells arranged in a grid of rows and columns. A first conductor is coupled to a power supply voltage terminal of each of the plurality of memory cells. A second conductor is coupled to receive a power supply voltage. The memory array also includes a plurality of dummy cells. A transistor of one or more of the plurality of dummy cells has a first current electrode coupled to the first conductor, a second current electrode coupled to the second conductor, and a control electrode. The bias circuit is coupled to the control electrode of the transistor.
Public/Granted literature
- US20110211383A1 INTEGRATED CIRCUIT HAVING VARIABLE MEMORY ARRAY POWER SUPPLY VOLTAGE Public/Granted day:2011-09-01
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