Invention Grant
US08400819B2 Integrated circuit having variable memory array power supply voltage 有权
具有可变存储阵列电源电压的集成电路

Integrated circuit having variable memory array power supply voltage
Abstract:
An integrated circuit comprises a memory array and a bias circuit. The memory array comprises a plurality of memory cells arranged in a grid of rows and columns. A first conductor is coupled to a power supply voltage terminal of each of the plurality of memory cells. A second conductor is coupled to receive a power supply voltage. The memory array also includes a plurality of dummy cells. A transistor of one or more of the plurality of dummy cells has a first current electrode coupled to the first conductor, a second current electrode coupled to the second conductor, and a control electrode. The bias circuit is coupled to the control electrode of the transistor.
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