Invention Grant
- Patent Title: Light sensor using wafer-level packaging
- Patent Title (中): 光传感器采用晶圆级封装
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Application No.: US12361426Application Date: 2009-01-28
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Publication No.: US08405115B2Publication Date: 2013-03-26
- Inventor: Arkadii V. Samoilov , Albert Bergemont , Chiung-C. Lo , Prashanth Holenarsipur , James Patrick Long
- Applicant: Arkadii V. Samoilov , Albert Bergemont , Chiung-C. Lo , Prashanth Holenarsipur , James Patrick Long
- Applicant Address: US CA San Jose
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: North Weber & Baugh LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.
Public/Granted literature
- US20100187557A1 Light Sensor Using Wafer-Level Packaging Public/Granted day:2010-07-29
Information query
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