发明授权
- 专利标题: Semiconductor devices and methods of fabricating the same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12832373申请日: 2010-07-08
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公开(公告)号: US08405158B2公开(公告)日: 2013-03-26
- 发明人: Young-Bae Yoon , Jong-Hyuk Kim , Keonsoo Kim , Youngseop Rah , Yoonmoon Park
- 申请人: Young-Bae Yoon , Jong-Hyuk Kim , Keonsoo Kim , Youngseop Rah , Yoonmoon Park
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2009-0075278 20090814
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L29/76
摘要:
A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.