发明授权
- 专利标题： Magnetic memory devices
- 专利标题（中）： 磁存储器件
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申请号： US13159236申请日： 2011-06-13
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公开(公告)号： US08405173B2公开(公告)日： 2013-03-26
- 发明人: Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
- 申请人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2010-0056651 20100615
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
公开/授权文献
- US20110303996A1 MAGNETIC MEMORY DEVICES 公开/授权日：2011-12-15
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