Invention Grant
US08406075B2 Ultra-low leakage memory architecture 有权
超低泄漏存储器架构

Ultra-low leakage memory architecture
Abstract:
An integrated circuit structure includes an active power supply line and a data-retention power supply line. A memory macro is connected to the active power supply line and the data-retention power supply line. The memory macro includes a memory cell array and a switch. The switch is configured to switch a connection between connecting the memory cell array to the active power supply line and connecting the memory cell array to the data-retention power supply line. The data-retention power supply line is outside of the memory macro.
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