Invention Grant
- Patent Title: Method of producing a sputter target material
- Patent Title (中): 溅射靶材的制造方法
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Application No.: US12479121Application Date: 2009-06-05
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Publication No.: US08409498B2Publication Date: 2013-04-02
- Inventor: Keisuke Inoue , Tsuyoshi Fukui , Shigeru Taniguchi , Norio Uemura , Katsunori Iwasaki , Kazuya Saitoh
- Applicant: Keisuke Inoue , Tsuyoshi Fukui , Shigeru Taniguchi , Norio Uemura , Katsunori Iwasaki , Kazuya Saitoh
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-102899 20040331; JP2004-121955 20040416
- Main IPC: B22F1/00
- IPC: B22F1/00

Abstract:
A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of Ti, Zr, V, Nb and Cr, and the balance of Mo and unavoidable impurities, and has a microstructure seen at a perpendicular cross section to a sputtering surface, in which microstructure oxide particles exist near a boundary of each island of the metal element (M), and wherein the maximum area of the island, which is defined by connecting the oxide particles with linear lines so as to form a closed zone, is not more than 1.0 mm2.
Public/Granted literature
- US20090238712A1 METHOD OF PRODUCING A SPUTTER TARGET MATERIAL Public/Granted day:2009-09-24
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