发明授权
- 专利标题: Multi-project wafer and method of making same
- 专利标题(中): 多项目晶圆及其制作方法
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申请号: US12941240申请日: 2010-11-08
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公开(公告)号: US08409881B2公开(公告)日: 2013-04-02
- 发明人: William Cheng , Mirng-Ji Lii , Chen-Yung Ching , Hsin-Hui Lee
- 申请人: William Cheng , Mirng-Ji Lii , Chen-Yung Ching , Hsin-Hui Lee
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type.
公开/授权文献
- US20110049516A1 MULTI-PROJECT WAFER AND METHOD OF MAKING SAME 公开/授权日:2011-03-03
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