发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12577367申请日: 2009-10-12
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公开(公告)号: US08409890B2公开(公告)日: 2013-04-02
- 发明人: Asami Tadokoro , Masashi Fujita
- 申请人: Asami Tadokoro , Masashi Fujita
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2008-267427 20081016
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A structure capable of changing the characteristic value of an element after the formation of the element in order to prevent the increase of the manufacturing cost and delay in the delivery of a product. A plurality of diodes is connected in series. Then, a part of the plurality of diodes is short-circuited by a wiring. In specific, a diode and a wiring are connected in parallel, whereby a current flows preferentially into the wiring, so that the diode can be regarded as nonexistent. Then, the wiring is cut at a part of the wiring, thereby having the diode which is connected to the wiring in parallel before the cutting functioning.
公开/授权文献
- US20100096736A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日:2010-04-22
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