发明授权
US08409946B2 Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells
有权
形成场效应晶体管，多个场效应晶体管和包括多个单独存储单元的DRAM电路的方法
- 专利标题： Methods of forming field effect transistors, pluralities of field effect transistors, and DRAM circuitry comprising a plurality of individual memory cells
- 专利标题（中）： 形成场效应晶体管，多个场效应晶体管和包括多个单独存储单元的DRAM电路的方法
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申请号： US13528028申请日： 2012-06-20
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公开(公告)号： US08409946B2公开(公告)日： 2013-04-02
- 发明人: Paul Grisham , Gordon A. Haller , Sahn D. Tang
- 申请人： Paul Grisham , Gordon A. Haller , Sahn D. Tang
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L21/8236
- IPC分类号： H01L21/8236
摘要：
A method of forming a field effect transistor includes forming trench isolation material within a semiconductor substrate and on opposing sides of a semiconductor material channel region along a length of the channel region. The trench isolation material is formed to comprise opposing insulative projections extending toward one another partially under the channel region along the channel length and with semiconductor material being received over the projections. The trench isolation material is etched to expose opposing sides of the semiconductor material along the channel length. The exposed opposing sides of the semiconductor material are etched along the channel length to form a channel fin projecting upwardly relative to the projections. A gate is formed over a top and opposing sides of the fin along the channel length. Other methods and structures are disclosed.
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