发明授权
- 专利标题： Ultra-low drain-source resistance power MOSFET
- 专利标题（中）： 超低漏源电阻功率MOSFET
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申请号： US11386927申请日： 2006-03-21
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公开(公告)号： US08409954B2公开(公告)日： 2013-04-02
- 发明人: The-Tu Chau , Sharon Shi , Qufei Chen , Martin Hernandez , Deva Pattanayak , Kyle Terrill , Kuo-In Chen
- 申请人： The-Tu Chau , Sharon Shi , Qufei Chen , Martin Hernandez , Deva Pattanayak , Kyle Terrill , Kuo-In Chen
- 申请人地址： US CA Santa Clara
- 专利权人： Vishay-Silconix
- 当前专利权人： Vishay-Silconix
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorous. The novel red Phosphorous doped substrate enables a desirable low drain-source resistance.
公开/授权文献
- US20070221989A1 Ultra-low drain-source resistance power MOSFET 公开/授权日：2007-09-27
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