发明授权
- 专利标题: Lead-free structures in a semiconductor device
- 专利标题(中): 半导体器件中的无铅结构
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申请号: US12912519申请日: 2010-10-26
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公开(公告)号: US08410604B2公开(公告)日: 2013-04-02
- 发明人: Laurene Yip , Leilei Zhang , Kumar Nagarajan
- 申请人: Laurene Yip , Leilei Zhang , Kumar Nagarajan
- 申请人地址: US CA San Jose
- 专利权人: Xilinx, Inc.
- 当前专利权人: Xilinx, Inc.
- 当前专利权人地址: US CA San Jose
- 代理商 LeRoy D. Maunu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/44 ; H01L21/00
摘要:
A semiconductor device includes a semiconductor die and a plurality of lead-free solder bumps disposed on a surface of the semiconductor die. A substrate includes a plurality of metal layers and a plurality of dielectric layers. One of the metal layers includes a plurality of contact pads corresponding to the plurality of lead-free solder bumps, and one of the dielectric layers is an exterior dielectric layer having a plurality of respective openings for the contact pad. A plurality of respective copper posts is disposed on the contact pads. The respective copper post for each contact pad extends from the contact pad through the respective opening for the contact pad. The semiconductor die is mounted on the substrate with connections between the plurality of lead-free solder bumps and the plurality of copper posts.
公开/授权文献
- US20120098130A1 LEAD-FREE STRUCTURES IN A SEMICONDUCTOR DEVICE 公开/授权日:2012-04-26
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