发明授权
- 专利标题: Semiconductor memory apparatus
- 专利标题(中): 半导体存储装置
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申请号: US12948936申请日: 2010-11-18
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公开(公告)号: US08411512B2公开(公告)日: 2013-04-02
- 发明人: Chul Kim , Jong Chern Lee
- 申请人: Chul Kim , Jong Chern Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: William Park & Associates Ltd.
- 优先权: KR10-2010-0051301 20100531
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C7/22
摘要:
A semiconductor memory apparatus includes: a memory cell array including a plurality of memory cells; a bit line sense amplifier (BLSA) coupled to the memory cells in the memory cell array through a bit line; a plurality of local input/output lines coupled to the BLSA; and a switching unit coupled to the local input/output lines and configured to select a part of the local input/output lines.
公开/授权文献
- US20110292707A1 SEMICONDUCTOR MEMORY APPARATUS 公开/授权日:2011-12-01
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