Invention Grant
US08411711B2 Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
有权
半导体激光器具有单个纵向模式的低相对强度噪声和掺入激光器的光学传输系统
- Patent Title: Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
- Patent Title (中): 半导体激光器具有单个纵向模式的低相对强度噪声和掺入激光器的光学传输系统
-
Application No.: US12630367Application Date: 2009-12-03
-
Publication No.: US08411711B2Publication Date: 2013-04-02
- Inventor: Alexey Gubenko , Alexey Kovsh , Greg Wojcik , Daniil Livshits , Igor Krestnikov , Sergey Mikhrin
- Applicant: Alexey Gubenko , Alexey Kovsh , Greg Wojcik , Daniil Livshits , Igor Krestnikov , Sergey Mikhrin
- Applicant Address: DE Dortmund
- Assignee: Innolume GmbH
- Current Assignee: Innolume GmbH
- Current Assignee Address: DE Dortmund
- Agency: Brown & Michaels, PC
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S5/00

Abstract:
A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.
Public/Granted literature
Information query