发明授权
- 专利标题： Lateral insulated gate bipolar transistor (LIGBT)
- 专利标题（中）： 侧面绝缘栅双极晶体管（LIGBT）
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申请号： US12648847申请日： 2009-12-29
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公开(公告)号： US08415712B2公开(公告)日： 2013-04-09
- 发明人: Florin Udrea , Vasantha Pathirana , Tanya Trajkovic , Nishad Udugampola
- 申请人： Florin Udrea , Vasantha Pathirana , Tanya Trajkovic , Nishad Udugampola
- 申请人地址： GB Cambridge
- 专利权人： Cambridge Semiconductor Limited
- 当前专利权人： Cambridge Semiconductor Limited
- 当前专利权人地址： GB Cambridge
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331
摘要：
This invention generally relates to LIGBTs, ICs comprising an LIGBT and methods of forming an LIGBT, and more particularly to an LIGBT comprising a substrate region of first conductivity type and peak dopant concentration less than about 1×1017/cm3; a lateral drift region of a second, opposite conductivity type adjacent the substrate region and electrically coupled to said substrate region; a charge injection region of the first conductivity type to inject charge toward said lateral drift region; a gate to control flow of said charge in said lateral drift region; metal enriched adhesive below said substrate region; and an intermediate layer below said substrate region to substantially suppress charge injection into said substrate region from said metal enriched adhesive.
公开/授权文献
- US20110156096A1 Lateral Insulated Gate Bipolar Transistor (LIGBT) 公开/授权日：2011-06-30
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