Invention Grant
- Patent Title: Method of forming epi film in substrate trench
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Application No.: US12784207Application Date: 2010-05-20
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Publication No.: US08415718B2Publication Date: 2013-04-09
- Inventor: Jeff J. Xu
- Applicant: Jeff J. Xu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/085
- IPC: H01L27/085

Abstract:
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.
Public/Granted literature
- US20110101421A1 METHOD OF FORMING EPI FILM IN SUBSTRATE TRENCH Public/Granted day:2011-05-05
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