发明授权
- 专利标题： Radiation source, lithographic apparatus and device manufacturing method
- 专利标题（中）： 辐射源，光刻设备和器件制造方法
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申请号： US12809427申请日： 2008-12-19
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公开(公告)号： US08416391B2公开(公告)日： 2013-04-09
- 发明人: Vadim Yevgenyevich Banine , Maarten Marinus Johannes Wilhelmus Van Herpen , Wouter Anthon Soer
- 申请人： Vadim Yevgenyevich Banine , Maarten Marinus Johannes Wilhelmus Van Herpen , Wouter Anthon Soer
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 国际申请： PCT/NL2008/050820 WO 20081219
- 国际公布： WO2009/078722 WO 20090625
- 主分类号： G03B27/54
- IPC分类号： G03B27/54 ; G21G4/00
摘要：
A radiation source is configured to generate radiation. The radiation source includes a first electrode and a second electrode configured to produce an electrical discharge during use to generate radiation-emitting plasma from a plasma fuel. The radiation source also includes a fuel supply configured to supply a plasma fuel to a fuel release area that is associated with the first electrode and the second electrode, and a fuel release configured to induce release of fuel, supplied by the fuel supply, from the fuel release area. The fuel release area is spaced-apart from the first electrode and from the second electrode.
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